Materials/Components

SILICON

Silicon parts for semiconductor applications are primarily used as consumable components within the chambers of etching processes. In recent years, as semiconductor manufacturing has advanced toward higher performance and finer patterning, the proportion of silicon part usage has continued to increase.

With their high heat and plasma resistance and lower contamination compared to metal materials, silicon parts protect the interior of equipment from plasma and chemical reactions and play an essential role in preventing process contamination.

Our Production and Sales System

CMTX maintains a stable supply of silicon ingots from its subsidiary SELIG and supplies a wide range of silicon parts to customers in Korea and around the world, continually expanding its reach across the global market.

Silicon Properties Table

	Single-Crystal Silicon	Polycrystalline Silicon
Crystal Structure	Single crystal	Polycrystalline
Density	Approx. 2.329 g/cm³	Approx. 2.32~2.33 g/cm³
Thermal Conductivity	Approx. 149 W/m·K	Approx. 80~120 W/m·K
Bandgap	Approx. 1.12 eV (300K)	Approx. 1.12 eV (identical, though with more crystal defects)
Specific Heat	Approx. 700 J/kg·K	Approx. 700 J/kg·K
Thermal Expansion Coefficient	2.6 × 10⁻⁶ /K	Approx. 2.5~2.7 × 10⁻⁶ /K
Electrical Resistivity	10⁴~10⁶ Ω·cm	10⁴~10⁶ Ω·cm
Mechanical Strength	Approx. 7000 MPa (tensile strength varies by crystal orientation)	Lower overall (200~400 MPa)

CMTX produces both single-crystal and polycrystalline silicon internally, delivering a fully integrated one-stop solution that ensures tailored customer support, consistent product quality, reliable lead times, and robust technical assistance.

Main Products

Equipment	Purpose
Silicon C-Shroud Ring Silicon Outer Ring	Protects the wafer edge inside the chamber to enhance wafer yield. These components also stabilize gas flow and plasma regions within the chamber, serving to block and minimize particle generation.
Silicon Electrode	Functions as both a plasma generator and wafer support, while promoting uniform plasma distribution across the chamber.
Silicon Curved Electrode	Featuring a convex or concave design rather than a flat surface, this electrode is optimized for precise control of electric field distribution and plasma density.

QUARTZ

Quartz parts, manufactured from high-purity silica (SiO2), are consumable components known for their exceptional heat, corrosion, and chemical resistance. They serve critical functions in high-temperature and ultra-clean processing environments.

These parts are indispensable in semiconductor applications such as CVD, diffusion, RTP, and wet cleaning processes, where precise thermal and chemical stability is critical.

Quartz Properties Table

Chemical Formula	SiO₂ (≥ 99.99%)
Density	2.2
Hardness	Approx. 5.5–6.5
Tensile Strength	Approx. 48
Flexural Strength	Approx. 50–70
Thermal Expansion Coefficient	5.5 × 10⁻⁷ (20–1000°C)
Thermal Conductivity	1.3 (at 25°C)
Specific Heat	0.67 (at 25°C)
Softening Point	Approx. 1665°C
Operating Temperature	Approx. 1100–1200°C (continuous use)
Dielectric Constant (1 MHz)	3.75
Electrical Resistivity	> 10¹⁶ (at 20°C)
Optical Transmittance	Transmits across the UV–IR range (180–3500 nm and above)
Chemical Resistance	Highly resistant to acids, bases, and organic solvents (except HF)

CMTX produces both single-crystal and polycrystalline silicon internally, delivering a fully integrated one-stop solution that ensures tailored customer support, consistent product quality, reliable lead times, and robust technical assistance.

Main Products

Equipment	Purpose
Quartz Ring	Protects the chamber, regulates gas flow, and prevents metal corrosion on chamber walls. Its superior chemical resistance and high dimensional precision make it widely used in semiconductor processing.
Quartz Window	Functions as a transparent viewing and optical window for monitoring the chamber interior.
Quartz Insert / Liner	Shields the chamber’s inner walls and provides a durable internal lining for stable operation.

SAPPHIRE

Sapphire parts, manufactured from single-crystal alumina (Al₂O₃), are consumable components known for their exceptional heat, corrosion, and chemicals resistance. They serve critical functions in plasma, high-temperature, and high-voltage process environments.

These parts are indispensable in semiconductor applications such as ETCH, CVD, and RTP, where precise thermal and chemical stability is critical.

Sapphire Physical Properties

Chemical Composition	Al₂O₃ (Synthetic Single Crystal)
Crystal Structure	Trigonal System (hexagonal/rhombohedral), R3c
Density	Approx. 3.98 g/cm³
Hardness (Mohs)	9
Tensile Strength	Approx. 300–400 MPa (at 25 °C)
Compressive Strength	Approx. 2.0–2.1 GPa
Young’s modulus	Approx. 345–400 GPa (varies by orientation)
Coefficient of Thermal Expansion (CTE)	Approx. 5.3–7.5 × 10⁻⁶ /K (average along c-axis)
Thermal Conductivity	35 W/m·K(average)
Specific Heat	Approx. 750 J/kg·K

Main Products

Equipment	Purpose
Sapphire Window	Transparent viewing and optical window designed for high-temperature and high-vacuum environments. Delivers excellent scratch resistance and superior transmittance from UV to IR ranges.
Sapphire Tube / Rod	Utilized in high-temperature gas or chemical transport lines. Its outstanding corrosion resistance and electrical insulation make it ideal for plasma process applications.
Sapphire Sleeve / Tube / Shaft	Provides precise fluid control, insulation, and mechanical support in high-temperature, high-vacuum, plasma, and chemically reactive environments.

CERAMIC

Ceramics are generally categorized into oxide, nitride, and carbide systems, with key materials including Al2O3, ZrO2, Y2O3, AlN, and SiC.

Each ceramic type offers distinct characteristics, making them indispensable in semiconductor processes such as ETCH, CVD/ALD, RTP, and IMPLANT.

Physical Properties by Ceramic Material

	Al₂O₃ (Alumina)	SiC (Silicon Carbide)	Y₂O₃ (Yttria)	ZrO₂ (Zirconia)
Density (g/cm³)	3.9 - 4.0	3.1 - 3.2	Approx. 5.0	5.6 - 6.1
Hardness (Mohs)	9	9-9.5	5-6	6-7
Thermal Conductivity (W/m·K)	20 - 30	120 - 270	10 - 12	2 - 3
Coefficient of Thermal Expansion (×10⁻⁶/K)	7 - 8	4 - 5	Approx. 8	10 - 11
Specific Heat (J/g·K)	0.88	0.67	0.3 - 0.5	0.3 - 0.4
Electrical Insulation	Excellent	Good	Excellent	Good
Chemical Resistance	Very Good	Good	Outstanding	Very Good
Wear Resistance	High	Very High	Moderate	Moderate
Heat Resistance (Max Operating Temperature)	1700°C	1600°C	2400°C	1200°C
Main Parts	Insulation parts, wafer supports	Shower Head, Susceptor, Focus Ring, Heater Cover	ESC insulation layers, liners	Valve, Nozzle, Shaft

Main Products

Equipment	Purpose
Ceramic Nozzle	Distributes reactive gases uniformly over the wafer during CVD processes while maintaining plasma equilibrium. Compared to metal nozzles, it minimizes particle generation and corrosion risk.
Ceramic Ring	Ensures film uniformity and electrical insulation near the wafer edge, enhancing plasma stability while protecting metallic components.
SiC Wafer	Exhibits superior electrical and thermal performance over conventional silicon wafers, making it one of the most advanced materials in next-generation semiconductor applications.
Y2O3 Ring	Combines excellent corrosion resistance, high dielectric constant, and strong plasma resistance to maintain etch uniformity and safeguard components from plasma exposure.

Business Overview

SILICON

Our Production and Sales System

Silicon Properties Table

Main Products

QUARTZ

Quartz Properties Table

Main Products

SAPPHIRE

Sapphire Physical Properties

Main Products

CERAMIC

Physical Properties by Ceramic Material

Main Products